The IRFHE4250DTRPBF is a 2 N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 156W and a maximum drain to source voltage of 25V. The device is packaged in a QFN EP package and is designed for surface mount applications. It features an input capacitance of 1.735nF and a maximum Rds on resistance of 2.75mR.
PackageQFN EP
MountingSurface Mount
Power156W
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Technical Specifications
International Rectifier IRFHE4250DTRPBF technical specifications.
General
| Package/Case | QFN EP |
| Continuous Drain Current (ID) | 303A |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.735nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 156W |
| Rds On Max | 2.75mR |
| Series | FASTIRFET™ |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHE4250DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHE4250DTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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