N-Channel Power MOSFET, 25V drain-source voltage, 28A continuous drain current, and 2.2mΩ maximum drain-source on-resistance. Features 8.1ns fall time, 11ns turn-on delay, and 14ns turn-off delay. This silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 2.7W. Surface mountable in a 3.3mm x 3.3mm plastic QFN-8 package, it is halogen-free and RoHS compliant.
MountingSurface Mount
Power2.7W
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Technical Specifications
International Rectifier IRFHM4226TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 2.2MR |
| Fall Time | 8.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 11ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHM4226TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM4226TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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