N-Channel Power MOSFET, 25V drain-source voltage, 28A continuous drain current, and 2.2mΩ maximum drain-source on-resistance. Features 8.1ns fall time, 11ns turn-on delay, and 14ns turn-off delay. This silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 2.7W. Surface mountable in a 3.3mm x 3.3mm plastic QFN-8 package, it is halogen-free and RoHS compliant.
MountingSurface Mount
Power2.7W
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Technical Specifications
International Rectifier IRFHM4226TRPBF technical specifications.
General
Continuous Drain Current (ID)
28A
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
2.2MR
Fall Time
8.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.9mm
Input Capacitance
2nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
2.7W
Radiation Hardening
No
Rds On Max
2.2mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
14ns
Turn-On Delay Time
11ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM4226TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM4226TRPBF to view detailed technical specifications.
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