International Rectifier
IRFHM8228TRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Resistance0.0042R
MountingSurface Mount
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Technical Specifications
International Rectifier IRFHM8228TRPBF technical specifications.
General
Continuous Drain Current (ID)
19A
Drain to Source Voltage (Vdss)
25V
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.667nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Package Quantity
4000
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
5.2mR
Resistance
0.0042R
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
13ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM8228TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM8228TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.