N-channel Power MOSFET, 30V Drain-Source Voltage, 20A Continuous Drain Current. Features low 4.3mΩ Rds On at 10V Vgs, 7.1mΩ Rds On at 4.5V Vgs, and 1.8V threshold voltage. Operates with 9.8ns turn-on delay and 9.1ns turn-off delay. Packaged in a 3.3mm x 3.3mm x 1mm VQFN surface mount package, tape and reel. RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power37W
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Technical Specifications
International Rectifier IRFHM830DTR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7.1mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.7ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
1.797nF
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
37W
Radiation Hardening
No
Rds On Max
4.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
9.1ns
Turn-On Delay Time
9.8ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM830DTR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHM830DTR2PBF to view detailed technical specifications.
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