International Rectifier
IRFHM8342TRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Resistance0.013R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFHM8342TRPBF technical specifications.
General
Continuous Drain Current (ID)
10A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5.6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
560pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
16mR
Resistance
0.013R
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
7.6ns
Turn-On Delay Time
8.1ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM8342TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM8342TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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