International Rectifier
IRFHM8342TRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Resistance0.013R
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRFHM8342TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Resistance | 0.013R |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 7.6ns |
| Turn-On Delay Time | 8.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHM8342TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM8342TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
