International Rectifier
IRFHS8242TRPBF
Power Field-Effect Transistor, 9.9A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-6
PackageVQFN
MountingSurface Mount
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Technical Specifications
International Rectifier IRFHS8242TRPBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
9.9A
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
13MR
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
653pF
Lead Free
Lead Free
Length
2.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
4000
Packaging
Tape and Reel
Rds On Max
13mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
5.4ns
Turn-On Delay Time
6.5ns
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHS8242TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHS8242TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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