N-channel MOSFET with 30V drain-source breakdown voltage and 8.8A continuous drain current. Features low 16mΩ drain-source resistance and 4.2nC gate charge. Operates from -55°C to 150°C, with a 2.1W power dissipation. Surface mountable in a QFN package, this component offers fast switching with turn-on delay of 5.9ns and fall time of 5ns.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRFHS8342TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
8.8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
600pF
Length
2.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
16mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
5.2ns
Turn-On Delay Time
5.9ns
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHS8342TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS8342TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.