N-channel MOSFET with 30V drain-source breakdown voltage and 8.8A continuous drain current. Features low 16mΩ drain-source resistance and 4.2nC gate charge. Operates from -55°C to 150°C, with a 2.1W power dissipation. Surface mountable in a QFN package, this component offers fast switching with turn-on delay of 5.9ns and fall time of 5ns.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRFHS8342TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 600pF |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 5.2ns |
| Turn-On Delay Time | 5.9ns |
| Width | 2.1mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHS8342TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS8342TR2PBF to view detailed technical specifications.
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