N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 49A continuous drain current. Offers low 12mΩ drain-source on-resistance and 58W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon FET operates from -55°C to 175°C. Key switching characteristics include a 11ns turn-on delay and 46ns fall time.
PackageTO-220-3
Current Rating49A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFI1010NPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 49A |
| Current Rating | 49A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 55V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFI1010NPBF Datasheet
Download the complete datasheet for International Rectifier IRFI1010NPBF to view detailed technical specifications.
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