N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 49A continuous drain current. Offers low 12mΩ drain-source on-resistance and 58W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon FET operates from -55°C to 175°C. Key switching characteristics include a 11ns turn-on delay and 46ns fall time.
PackageTO-220-3
Current Rating49A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFI1010NPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
49A
Current Rating
49A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
12mR
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
2.9nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
58W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
47W
Rds On Max
12mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
11ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFI1010NPBF Datasheet
Download the complete datasheet for International Rectifier IRFI1010NPBF to view detailed technical specifications.
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