N-Channel Power MOSFET, 150V Drain-Source Voltage, 34A Continuous Drain Current, and 16mΩ Max Drain-Source On-Resistance. Features a TO-220AB package for through-hole mounting, 46W maximum power dissipation, and operates from -40°C to 150°C. Includes 4.56nF input capacitance and 30V gate-source voltage rating. This silicon metal-oxide semiconductor FET is lead-free and RoHS compliant.
PackageTO-220-3
Current Rating34A
MountingThrough Hole
Power46W
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Technical Specifications
International Rectifier IRFI4228PBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 34A |
| Current Rating | 34A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 16MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19.62mm |
| Input Capacitance | 4.56nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 46W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 46W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 150V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFI4228PBF Datasheet
Download the complete datasheet for International Rectifier IRFI4228PBF to view detailed technical specifications.
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