International Rectifier
IRFIB6N60A
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Current Rating5.5A
Power60W
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Technical Specifications
International Rectifier IRFIB6N60A technical specifications.
General
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Voltage (Vdss)
600V
Lead Free
Contains Lead
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
60W
RoHS Compliant
No
DC Rated Voltage
600V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFIB6N60A Datasheet
Download the complete datasheet for International Rectifier IRFIB6N60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.