International Rectifier
IRFIBE20G
Power Field-Effect Transistor, 1.4A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Current Rating1.4A
Power30W
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Technical Specifications
International Rectifier IRFIBE20G technical specifications.
General
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | 1.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Voltage (Vdss) | 800V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 30W |
| RoHS Compliant | No |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFIBE20G Datasheet
Download the complete datasheet for International Rectifier IRFIBE20G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.