International Rectifier
IRFIBF30G
Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Current Rating1.9A
Power35W
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Technical Specifications
International Rectifier IRFIBF30G technical specifications.
General
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 900V |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Power Dissipation | 35W |
| RoHS Compliant | No |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFIBF30G Datasheet
Download the complete datasheet for International Rectifier IRFIBF30G to view detailed technical specifications.
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