IRFIBF30G

Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Current Rating1.9A

Power35W

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International Rectifier IRFIBF30G technical specifications.

Continuous Drain Current (ID)

1.9A

Current Rating

1.9A

Drain to Source Breakdown Voltage

900V

Lead Free

Contains Lead

Packaging

Bulk

Power Dissipation

35W

RoHS Compliant

DC Rated Voltage

900V

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.