N-channel MOSFET transistor featuring 60V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 42mΩ at a nominal Vgs of 4V. It operates within a temperature range of -55°C to 175°C and has a power dissipation of 37W. The TO-220 package facilitates easy mounting, with fast switching characteristics including a 7ns turn-on delay and 40ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power37W
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Technical Specifications
International Rectifier IRFIZ34EPBF technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 42MR |
| Dual Supply Voltage | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 700pF |
| Length | 10.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFIZ34EPBF Datasheet
Download the complete datasheet for International Rectifier IRFIZ34EPBF to view detailed technical specifications.
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