N-channel MOSFET transistor featuring 60V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 42mΩ at a nominal Vgs of 4V. It operates within a temperature range of -55°C to 175°C and has a power dissipation of 37W. The TO-220 package facilitates easy mounting, with fast switching characteristics including a 7ns turn-on delay and 40ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power37W
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Technical Specifications
International Rectifier IRFIZ34EPBF technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
42MR
Dual Supply Voltage
60V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
700pF
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
37W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
37W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
31ns
Turn-On Delay Time
7ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFIZ34EPBF Datasheet
Download the complete datasheet for International Rectifier IRFIZ34EPBF to view detailed technical specifications.
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