N-Channel Power MOSFET, TO-220 package, featuring 55V drain-source voltage and 31A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.024 ohms and a maximum power dissipation of 45W. With a gate-source voltage rating of 20V and a nominal Vgs of 4V, it exhibits fast switching characteristics with a 7.3ns turn-on delay and 47ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for through-hole mounting.
PackageTO-220
Current Rating30A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFIZ44NPBF technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
31A
Current Rating
30A
Drain to Source Voltage (Vdss)
55V
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.3nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
Through Hole
Turn-Off Delay Time
47ns
Turn-On Delay Time
7.3ns
DC Rated Voltage
60V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFIZ44NPBF Datasheet
Download the complete datasheet for International Rectifier IRFIZ44NPBF to view detailed technical specifications.
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