
N-Channel Power MOSFET, TO-220 package, featuring 55V drain-source voltage and 31A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.024 ohms and a maximum power dissipation of 45W. With a gate-source voltage rating of 20V and a nominal Vgs of 4V, it exhibits fast switching characteristics with a 7.3ns turn-on delay and 47ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for through-hole mounting.
International Rectifier IRFIZ44NPBF technical specifications.
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