N-Channel Power MOSFET, TO-220 package, featuring 55V drain-source voltage and 31A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.024 ohms and a maximum power dissipation of 45W. With a gate-source voltage rating of 20V and a nominal Vgs of 4V, it exhibits fast switching characteristics with a 7.3ns turn-on delay and 47ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for through-hole mounting.
PackageTO-220
Current Rating30A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFIZ44NPBF technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 55V |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.3nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | Through Hole |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 7.3ns |
| DC Rated Voltage | 60V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFIZ44NPBF Datasheet
Download the complete datasheet for International Rectifier IRFIZ44NPBF to view detailed technical specifications.
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