International Rectifier
IRFN9240
Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
PackageSMD/SMT
MountingSurface Mount
Power125W
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Technical Specifications
International Rectifier IRFN9240 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 510mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFN9240 Datasheet
Download the complete datasheet for International Rectifier IRFN9240 to view detailed technical specifications.
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