
N-Channel Power MOSFET, 100V Drain-Source Voltage, 33A Continuous Drain Current, and 52mΩ Max Drain-Source On-Resistance. Features a TO-247AC package for through-hole mounting, 140W maximum power dissipation, and operates from -55°C to 175°C. Includes 1.4nF input capacitance and 8.2ns turn-on delay. This silicon Metal-oxide Semiconductor FET is RoHS compliant.
International Rectifier IRFP140NPBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 52mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 100V |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFP140NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
