N-Channel Power MOSFET, 100V Drain-Source Voltage, 33A Continuous Drain Current, and 52mΩ Max Drain-Source On-Resistance. Features a TO-247AC package for through-hole mounting, 140W maximum power dissipation, and operates from -55°C to 175°C. Includes 1.4nF input capacitance and 8.2ns turn-on delay. This silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-247AC
Current Rating33A
MountingThrough Hole
Power140W
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Technical Specifications
International Rectifier IRFP140NPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
52mR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
20.3mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
140W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
44ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
100V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP140NPBF Datasheet
Download the complete datasheet for International Rectifier IRFP140NPBF to view detailed technical specifications.
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