International Rectifier
IRFP150N
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN
PackageTO-247AC
MountingThrough Hole
Power150W
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Technical Specifications
International Rectifier IRFP150N technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 150W |
| Rds On Max | 36mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFP150N Datasheet
Download the complete datasheet for International Rectifier IRFP150N to view detailed technical specifications.
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