N-Channel Power MOSFET featuring 200V drain-source voltage and 30A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 75mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247AC package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 214W. Key electrical characteristics include a 20V gate-source voltage rating and a nominal Vgs of 4V.
PackageTO-247AC
Current Rating30A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRFP250NPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
75mR
Dual Supply Voltage
200V
Gate to Source Voltage (Vgs)
20V
Height
20.3mm
Input Capacitance
2.159nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
214W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
41ns
Turn-On Delay Time
14ns
DC Rated Voltage
200V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP250NPBF Datasheet
Download the complete datasheet for International Rectifier IRFP250NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
