IRFP260MPBF

N-Channel Power MOSFET, 200V Drain-Source Voltage, 50A Continuous Drain Current, and 0.04 Ohm On-Resistance. Features a TO-247AC through-hole package, 300W maximum power dissipation, and a maximum operating temperature of 175°C. Includes 17ns turn-on delay and 55ns turn-off delay, with 4.057nF input capacitance. This silicon, metal-oxide semiconductor FET is lead-free and RoHS compliant.