N-Channel Power MOSFET, 600V drain-to-source breakdown voltage, 27A continuous drain current. Features 0.22 ohm on-resistance and 500W power dissipation. Silicon Metal-oxide Semiconductor FET in a TO-247AC plastic package. Lead-free and RoHS compliant.
International Rectifier IRFP27N60KPBF technical specifications.
| Continuous Drain Current (ID) | 27A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Voltage (Vdss) | 600V |
| Lead Free | Lead Free |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 500W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFP27N60KPBF to view detailed technical specifications.
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