IRFP2907PBF

N-Channel Power MOSFET, 75V Drain-to-Source Voltage (Vdss) and 209A continuous drain current (ID). Features low on-resistance of 0.0045ohm, 470W maximum power dissipation, and a wide operating temperature range of -55°C to 175°C. This silicon, metal-oxide semiconductor FET is housed in a TO-247AC through-hole plastic package and is lead-free and RoHS compliant. Turn-on delay time is 23ns with a turn-off delay time of 130ns.