N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss) and 23A Continuous Drain Current (ID). Features 0.2 ohm on-resistance and 280W maximum power dissipation. Packaged in a TO-247AC with through-hole termination. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageTO-247AC
Current Rating23A
Power280W
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Technical Specifications
International Rectifier IRFP360PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
23A
Current Rating
23A
Drain to Source Breakdown Voltage
400V
Drain to Source Voltage (Vdss)
400V
Dual Supply Voltage
400V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Nominal Vgs
4V
Packaging
Bulk
Power Dissipation
280W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
DC Rated Voltage
400V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP360PBF Datasheet
Download the complete datasheet for International Rectifier IRFP360PBF to view detailed technical specifications.
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