N-Channel Power MOSFET, 400V Drain-Source Voltage (Vdss) and 23A Continuous Drain Current (ID). Features 0.2 ohm on-resistance and 280W maximum power dissipation. Packaged in a TO-247AC with through-hole termination. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageTO-247AC
Current Rating23A
Power280W
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Technical Specifications
International Rectifier IRFP360PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 23A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Voltage (Vdss) | 400V |
| Dual Supply Voltage | 400V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Nominal Vgs | 4V |
| Packaging | Bulk |
| Power Dissipation | 280W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFP360PBF Datasheet
Download the complete datasheet for International Rectifier IRFP360PBF to view detailed technical specifications.
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