International Rectifier
IRFP4229PBF
Power Field-Effect Transistor, 44A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
PackageTO-247AC
MountingThrough Hole
Power310W
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Technical Specifications
International Rectifier IRFP4229PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
44A
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
46MR
Dual Supply Voltage
250V
Gate to Source Voltage (Vgs)
30V
Height
20.3mm
Input Capacitance
4.56nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
310W
Mount
Through Hole
Nominal Vgs
5V
Number of Elements
1
Power Dissipation
310W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP4229PBF Datasheet
Download the complete datasheet for International Rectifier IRFP4229PBF to view detailed technical specifications.
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