N-Channel Power MOSFET, 100V Drain-Source Voltage, 72A Continuous Drain Current, and 0.014 Ohm Max On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-247AC package for through-hole mounting, a maximum power dissipation of 190W, and operates within a temperature range of -55°C to 175°C. Includes a nominal gate-source voltage of 5.5V and a gate-source voltage limit of 20V. RoHS compliant and lead-free.
PackageTO-247AC
Current Rating72A
MountingThrough Hole
Power190W
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Technical Specifications
International Rectifier IRFP4710PBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 72A |
| Current Rating | 72A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 6.16nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| On-State Resistance | 14R |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 100V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFP4710PBF Datasheet
Download the complete datasheet for International Rectifier IRFP4710PBF to view detailed technical specifications.
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