International Rectifier
IRFR1010Z
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
PackageTO-252-3
Current Rating42A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR1010Z technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
42A
Current Rating
42A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
5.8mR
Drain to Source Voltage (Vdss)
55V
Input Capacitance
2.84nF
Lead Free
Contains Lead
Max Power Dissipation
140W
Mount
Surface Mount
Package Quantity
75
Packaging
Rail/Tube
Rds On Max
7.5mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
55V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFR1010Z Datasheet
Download the complete datasheet for International Rectifier IRFR1010Z to view detailed technical specifications.
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