International Rectifier
IRFR1010ZTRLPBF
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRFR1010ZTRLPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
91A
Drain to Source Breakdown Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.84nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Surface Mount
Number of Elements
1
Package Quantity
6000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
42ns
Turn-On Delay Time
17ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR1010ZTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFR1010ZTRLPBF to view detailed technical specifications.
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