N-Channel Power MOSFET, featuring a 60V drain-source voltage and 79A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.0084 ohms. Designed for surface mounting in a DPAK package, it operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 110W. Key electrical characteristics include a 20V gate-to-source voltage and a turn-on delay time of 13ns.
PackageDPAK
MountingSurface Mount
Power110W
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Technical Specifications
International Rectifier IRFR1018ETRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 79A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR1018ETRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR1018ETRPBF to view detailed technical specifications.
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