International Rectifier
IRFR120N
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
PackageDPAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR120N technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9.4A |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.78mm |
| Input Capacitance | 330pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 4.5ns |
| Width | 6.22mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFR120N Datasheet
Download the complete datasheet for International Rectifier IRFR120N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.