N-Channel Power MOSFET, TO-252 package, featuring 100V drain-source voltage and 9.4A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 210mΩ at a nominal gate-source voltage of 4V. With a maximum power dissipation of 48W and operating temperature range from -55°C to 175°C, it is suitable for surface mount applications. RoHS compliant and lead-free.
PackageTO-252
Current Rating9.1A
MountingSurface Mount
Power48W
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Technical Specifications
International Rectifier IRFR120NTRLPBF technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.1A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 210mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 4.5ns |
| DC Rated Voltage | 100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR120NTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFR120NTRLPBF to view detailed technical specifications.
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