International Rectifier
IRFR120ZTRLPBF
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power35W
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Technical Specifications
International Rectifier IRFR120ZTRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 310pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 8.3ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR120ZTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFR120ZTRLPBF to view detailed technical specifications.
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