International Rectifier
IRFR12N25DTRPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
Voltage250V
Current14A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR12N25DTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Current | 14A |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 810pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.1ns |
| Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR12N25DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR12N25DTRPBF to view detailed technical specifications.
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