N-Channel Power MOSFET, 200V Drain-Source Voltage, 13A Continuous Drain Current, and 0.235ohm Maximum Drain-Source On-Resistance. Features a 1-element silicon metal-oxide semiconductor construction with a 30V Gate-to-Source Voltage rating. Surface mountable in a DPAK package, this component offers 110W maximum power dissipation and operates from -55°C to 175°C. RoHS compliant and lead-free.
PackageDPAK
Current Rating13A
MountingSurface Mount
Power110W
Quick Jump:
Technical Specifications
International Rectifier IRFR13N20DPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 235mR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Power Dissipation | 110W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 200V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR13N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFR13N20DPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
