International Rectifier
IRFR13N20DTRPBF
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
Current Rating13A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR13N20DTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 235mR |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 235mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR13N20DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR13N20DTRPBF to view detailed technical specifications.
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