International Rectifier
IRFR15N20DTRPBF
Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
Power3W
Quick Jump:
Technical Specifications
International Rectifier IRFR15N20DTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 165MR |
| Input Capacitance | 910pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 165mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR15N20DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR15N20DTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
