IRFR18N15D

Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

PackageTO-252-3

MountingSurface Mount

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International Rectifier IRFR18N15D technical specifications.

Package/Case

TO-252-3

Continuous Drain Current (ID)

18A

Drain to Source Voltage (Vdss)

150V

Input Capacitance

900pF

Max Power Dissipation

110W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

125mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.