N-Channel Power MOSFET, 150V Vds, 18A Continuous Drain Current (ID), and 0.125ohm Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK package for surface mounting, a maximum power dissipation of 110W, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.8ns fall time and 8.8ns turn-on delay time.
PackageDPAK
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFR18N15DPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 125mR |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 8.8ns |
| DC Rated Voltage | 150V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR18N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFR18N15DPBF to view detailed technical specifications.
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