N-Channel Power MOSFET, 150V Vds, 18A Continuous Drain Current (ID), and 0.125ohm Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK package for surface mounting, a maximum power dissipation of 110W, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.8ns fall time and 8.8ns turn-on delay time.
PackageDPAK
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFR18N15DPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
125mR
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Nominal Vgs
5.5V
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
15ns
Turn-On Delay Time
8.8ns
DC Rated Voltage
150V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR18N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFR18N15DPBF to view detailed technical specifications.
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