International Rectifier
IRFR18N15DTRRP
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRFR18N15DTRRP technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
900pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Package Quantity
6000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
8.8ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR18N15DTRRP Datasheet
Download the complete datasheet for International Rectifier IRFR18N15DTRRP to view detailed technical specifications.
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