International Rectifier
IRFR220NTRRPBF
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
PackageTO-252-3
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFR220NTRRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR220NTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR220NTRRPBF to view detailed technical specifications.
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