N-Channel Power MOSFET, 55V Drain-Source Voltage, 56A Continuous Drain Current, and 16mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-252-3 surface mount package, ideal for demanding applications. With a maximum power dissipation of 110W and an operating temperature range of -55°C to 175°C, it offers robust performance. Key electrical characteristics include a 15ns turn-on delay and 55ns turn-off delay, with 2.43nF input capacitance. This RoHS compliant component is supplied on cut tape.
PackageTO-252-3
Current Rating56A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR2405TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 56A |
| Current Rating | 56A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 16mR |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.43nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR2405TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR2405TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.