N-Channel Power MOSFET, 100V Drain-Source Voltage, 31A Continuous Drain Current, and 39mΩ Max On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252-3 surface mount package, 1.69nF input capacitance, and 12ns turn-on delay. Operating from -55°C to 175°C, it offers 3W max power dissipation and is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR3410TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 39MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.69nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3410TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3410TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.