International Rectifier
IRFR3412PBF
Power Field-Effect Transistor, 30A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR3412PBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 3.43nF |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3412PBF Datasheet
Download the complete datasheet for International Rectifier IRFR3412PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.