N-Channel HEXFET power MOSFET featuring 40V drain-source breakdown voltage and 9mΩ maximum drain-source resistance. This surface-mount component offers a continuous drain current of 77A and a maximum power dissipation of 90W. Key switching characteristics include a 15ns turn-on delay and 38ns fall time, with input capacitance at 1.51nF. Packaged in DPAK for tape and reel distribution, it operates across a temperature range of -55°C to 175°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
International Rectifier IRFR3504ZTRRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
77A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
40V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
2.26mm
Input Capacitance
1.51nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Package Quantity
6000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
9mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR3504ZTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3504ZTRRPBF to view detailed technical specifications.
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