N-Channel HEXFET power MOSFET featuring 40V drain-source breakdown voltage and 9mΩ maximum drain-source resistance. This surface-mount component offers a continuous drain current of 77A and a maximum power dissipation of 90W. Key switching characteristics include a 15ns turn-on delay and 38ns fall time, with input capacitance at 1.51nF. Packaged in DPAK for tape and reel distribution, it operates across a temperature range of -55°C to 175°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
International Rectifier IRFR3504ZTRRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.26mm |
| Input Capacitance | 1.51nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3504ZTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3504ZTRRPBF to view detailed technical specifications.
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