N-Channel Power MOSFET, 80V Drain-Source Voltage, 38A Continuous Drain Current, and 29mΩ Max On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 110W max power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay and 37ns turn-off delay, with a 13ns fall time. Input capacitance is 1.71nF, and gate-source voltage is rated up to 20V.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRFR3518TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 29MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.26mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 12ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3518TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3518TRPBF to view detailed technical specifications.
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