International Rectifier
IRFR3704
Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR3704 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.996nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 9.5mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.4ns |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFR3704 Datasheet
Download the complete datasheet for International Rectifier IRFR3704 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.