
N-Channel Power MOSFET, DPAK package, featuring 20V drain-source breakdown voltage and 75A continuous drain current. Offers a low 9mΩ drain-source on-resistance and 88W maximum power dissipation. Designed for surface mounting with a threshold voltage of 2V and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 4.8ns fall time and 6.8ns turn-on delay.
International Rectifier IRFR3706PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 9MR |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.41nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 6.8ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR3706PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
