N-Channel Power MOSFET, DPAK package, featuring 20V drain-source breakdown voltage and 75A continuous drain current. Offers a low 9mΩ drain-source on-resistance and 88W maximum power dissipation. Designed for surface mounting with a threshold voltage of 2V and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 4.8ns fall time and 6.8ns turn-on delay.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power88W
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Technical Specifications
International Rectifier IRFR3706PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
9MR
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
2.41nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
6.8ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR3706PBF Datasheet
Download the complete datasheet for International Rectifier IRFR3706PBF to view detailed technical specifications.
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