N-Channel Power MOSFET featuring 100V drain-source voltage and 56A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.0139 ohms and a maximum power dissipation of 143W. Encased in a TO-252AA package, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-252AA
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Technical Specifications
International Rectifier IRFR4510TRPBF technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 100V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 143W |
| Nominal Vgs | 3V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR4510TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR4510TRPBF to view detailed technical specifications.
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