P-channel power MOSFET for surface mount applications, featuring a -100V drain-source voltage and a continuous drain current of 13A. This silicon Metal-oxide Semiconductor FET offers a low on-state resistance of 205mΩ and a maximum power dissipation of 66W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching times with a turn-on delay of 15ns and a fall time of 46ns. The component is housed in a DPAK package and is RoHS compliant.
PackageDPAK
Current Rating-13A
MountingSurface Mount
Power66W
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Technical Specifications
International Rectifier IRFR5410PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 205mR |
| Dual Supply Voltage | -100V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 760pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| On-State Resistance | 205mR |
| Power Dissipation | 66W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR5410PBF Datasheet
Download the complete datasheet for International Rectifier IRFR5410PBF to view detailed technical specifications.
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