P-channel power MOSFET featuring a -100V drain-source voltage and -13A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 205mΩ drain-source on-resistance and is designed for surface mounting in a TO-252 package. Key specifications include a 760pF input capacitance, 66W maximum power dissipation, and operating temperatures from -55°C to 150°C. The component is RoHS compliant and lead-free.
PackageTO-252
Current Rating-13A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR5410TRPBF technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | -13A |
| Current Rating | -13A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 205mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 760pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR5410TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR5410TRPBF to view detailed technical specifications.
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