
P-channel MOSFET, 150V drain-source voltage, 13A continuous drain current, and 295mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252AA (DPAK) surface-mount package, 110W power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 37ns fall time, 53ns turn-off delay, 14ns turn-on delay, 860pF input capacitance, and a 20V maximum gate-source voltage. It is lead-free and RoHS compliant.
International Rectifier IRFR6215PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 295mR |
| Dual Supply Voltage | -150V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -150V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR6215PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
