N-Channel Power MOSFET, DPAK package, featuring 500V Drain to Source Breakdown Voltage and 6A Continuous Drain Current. Offers 1.05 Ohm Drain to Source Resistance and 119W Max Power Dissipation. Designed for surface mount applications with a 20V Gate to Source Voltage rating. Includes fast switching characteristics with 8.5ns Turn-On Delay and 20ns Fall Time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power119W
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Technical Specifications
International Rectifier IRFR825PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.346nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 119W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 119W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8.5ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR825PBF Datasheet
Download the complete datasheet for International Rectifier IRFR825PBF to view detailed technical specifications.
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